MH32V7245BST -6 General Description
The MH32V7245BST is 33554432-word x 72-bit dynamic ram stacked structural module. This consist of thirty-six
industry standard 16M x 4 dynamic RAMs in TSOP and two industry standard input buffer in TSSOP.
The stacked structure of TSOP on a card edge dual in-line package provides any application where high densities and
large of quantities memory are required.
This is a socket-type memory module ,suitable for easy interchange or addition of module.
MH32V7245BST -6 Maximum Ratings
MH32V7245BST -6 Features
·Utilizes industry standard 16M x 4 RAMs TSOP and industry standard input buffer in TSSOP
·168-pin (84-pin dual dual in-line package) stacked structure
·Single 3.3V(+/- 0.3V) supply operation
·Low stand-by power dissipation . . . . . . . . . . 64.9mW(Max)
·Low operation power dissipation
MH32V7245BST -5 . . . . . . . . . . . . . . . . . . 8.44W(Max)
MH32V7245BST -6 . . . . . . . . . . . . . . . . . . 7.79W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directry LVTTL compatible
·Includes(0.22 uF x 38) decoupling capacitors
·4096 refresh cycle every 64ms (A0 - A11)
·Hyper-page mpde,Read-modify-write,/CAS before /RAS refresh, Hidden refresh capabilities
·JEDEC standard pin configration & Buffered PD pin
·Buffered input except /RAS and DQ
·Gold plating contact pads
MH32V7245BST -6 Typical Application
Main memory unit for computers , Microcomputer memory
MH32V7245BST -6 datasheet

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- ETC [ETC]
- Cellular-band Quad-FET Mixer
- 147918 KB

- ·MH303-G
- ETC [ETC]
- Cellular-band Quad-FET Mixer
- 147918 KB

- ·MH303-PCB
- ETC [ETC]
- Cellular-band Quad-FET Mixer
- 147918 KB

- ·MH31
- MOSPEC [Mospec Semiconductor]
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- ·MH32
- MOSPEC [Mospec Semiconductor]
- HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)
- 133831 KB

- ·MH32D64AKQJ-10
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
- 351717 KB

- ·MH32D64AKQJ-75
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
- 351717 KB

- ·MH32D64KQH-10
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
- 359123 KB

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