Purchase MH8S72DCFD-6, In-stock MH8S72DCFD-6 From SeekIC.
Part Number: MH8S72DCFD-6
Description: The MH8S72DCFD is 8388608 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard 8M x 8 Sy nc...
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MH8S72DCFD-6
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DataSheet
General Description
MH8S72DCFD-6 General Description
The MH8S72DCFD is 8388608 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard 8M x 8 Sy nchronous DRAMs in TSOP.
The TSOP on a card edge dual in-line package prov ides any application where high densities and large of quantities memory are required.
This is a socket-ty pe memory m odule ,suitable f or easy interchange or addition of module.
MH8S72DCFD-6 Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
|
Vdd |
Supply voltage |
With respect to Vss |
-0.5~ 4.6 |
V |
|
VI |
Input Voltage |
With respect to Vss |
-0.5~ 4.6 |
V |
|
VO |
Output Voltage |
With respect to Vss |
-0.5~ 4.6 |
V |
|
IO |
Output current |
50 |
mA | |
|
Pd |
Power dissipation |
Ta=25C |
13 |
W |
|
Topr |
Operating temperature |
0~70 |
C | |
|
Tstg |
Storage temperature |
-40~100 |
C |
MH8S72DCFD-6 Features
·Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP package , industry standard Resistered buffer in TSSOP package,industry standard PLL in TSSOP package
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz
·Fully synchronous operation referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycles every 64ms
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz
·Fully synchronous operation referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycles every 64ms
MH8S72DCFD-6 Typical Application
Main memory or graphic memory in computer systems
MH8S72DCFD-6
PDF/DataSheet Download
- Datasheet: MH8S72DCFD-6
- File Size: 966592 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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