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MHPM6B10A120D

Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• UL RecognizedSpecifications Rating Symbol Value Unit IGBT Reverse Voltage VCES ...

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SeekIC No. : 004420433 Detail

MHPM6B10A120D: Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• UL Rec...

MHPM6B10A120D Data Sheet

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Part Number:
MHPM6B10A120D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Short Circuit Rated 10 s @ 125°C
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• UL Recognized


Specifications

Rating
Symbol
Value
Unit
IGBT Reverse Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
±20
V
Continuous IGBT Collector Current
5A120
ICmax
5.0
A
10A120
10
15A120
15
Peak Repetitive IGBT Collector Current (1)
5A120
IC(pk)
10
A
10A120
20
15A120
30
Continuous Diode Current
5A120
IFmax
5.0
A
10A120
10
5A120
15
Peak Repetitive Diode Current (1)
5A120
IF(pk)
10
A
10A120
20
15A120
30
IGBT Power Dissipation per die (TC = 25°C)
5A120
PD
43
W
10A120
65
15A120
82
Diode Power Dissipation per die (TC = 25°C)
5A120
PD
19
W
10A120
38
15A120
38
IGBT Power Dissipation per die (TC = 95°C)
5A120
PD
19
W
10A120
29
15A120
36
Diode Power Dissipation per die (TC = 95°C)
5A120
PD
8.3
W
10A120
17
15A120
17
Junction Temperature Range
TJ
40 to +150
°C
Short Circuit Duration (VCC = 600 V, TJ = 125°C)
tsc
10
sec



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