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Part Number: MHPM6B10A120D

 

 

 

 

 

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MHPM6B10A120D Maximum Ratings

Rating
Symbol
Value
Unit
IGBT Reverse Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
±20
V
Continuous IGBT Collector Current
5A120
ICmax
5.0
A
10A120
10
15A120
15
Peak Repetitive IGBT Collector Current (1)
5A120
IC(pk)
10
A
10A120
20
15A120
30
Continuous Diode Current
5A120
IFmax
5.0
A
10A120
10
5A120
15
Peak Repetitive Diode Current (1)
5A120
IF(pk)
10
A
10A120
20
15A120
30
IGBT Power Dissipation per die (TC = 25°C)
5A120
PD
43
W
10A120
65
15A120
82
Diode Power Dissipation per die (TC = 25°C)
5A120
PD
19
W
10A120
38
15A120
38
IGBT Power Dissipation per die (TC = 95°C)
5A120
PD
19
W
10A120
29
15A120
36
Diode Power Dissipation per die (TC = 95°C)
5A120
PD
8.3
W
10A120
17
15A120
17
Junction Temperature Range
TJ
40 to +150
°C
Short Circuit Duration (VCC = 600 V, TJ = 125°C)
tsc
10
sec

MHPM6B10A120D Features

• Short Circuit Rated 10 s @ 125°C
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• UL Recognized

MHPM6B10A120D datasheet

MHPM6B10A120D
PDF/DataSheet Download

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