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MIG10J503
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DataSheet
General Description
MIG10J503 Maximum Ratings
|
Item |
Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
| Operating Power Supply Voltage |
VBB |
- |
50 |
300 |
400 |
V |
|
VCC |
- |
13.5 |
15 |
17 | ||
|
VBS |
- |
13.5 |
15 |
17 | ||
| Current dissipation |
IBB |
VBB = 400 V ､VIN = 5 V(1arm) |
- |
- |
1 |
mA |
|
ICC |
VCC = 15 V､VIN = 5 V(1arm) |
- |
0.8 |
1.5 |
mA | |
| VCC = 15 V､VIN = 0 V(1arm) |
- |
1.1 |
1.5 |
mA | ||
|
IBS |
VCC = 15 V､VIN = 5 V(1arm) |
- |
330 |
600 |
A | |
| VCC = 15 V､VIN = 0 V(1arm) |
- |
470 |
1000 |
A | ||
| input Voltage |
VIH |
VIN = "H" |
3.5 |
2.8 |
- |
V |
|
VIL |
VIN = "L" |
- |
2.3 |
1.5 | ||
| input Voltage hysteresis |
VINhys |
VIN = "H""L" |
- |
0.5 |
- |
V |
| VIN = "L""H" |
- |
0.5 |
- | |||
| Input Current |
IIH |
VCC = 15 V､VIN = 5V |
50 |
100 |
200 |
A |
|
IIL |
VCC = 15 V､VIN = 0 V |
75 |
150 |
300 | ||
| IGBT Saturation Voltage |
VsatU |
VCC = VBS=15V, IC = 10 A, Upper Arm |
- |
1.5 |
2.0 |
V |
|
VsatL |
VCC = 15V, IC = 10 A, Lower Arm |
- |
1.5 |
2.0 | ||
| FRD Forward Voltage |
VFU |
IF = 10 A, Upper Arm |
- |
1.3 |
1.9 |
V |
|
VFL |
IF = 10 A, Lower Arm |
- |
1.3 |
1.9 | ||
| Fault Output Voltage |
VFO |
IFO = 5 mA, |
- |
0.8 |
1.2 |
V |
| Short Current Protection Voltage |
VR |
Short Current Protection |
0.45 |
0.5 |
0.55 |
V |
| Short Current Protection delay time |
VRtd |
Short Current Protection |
0.5 |
1 |
2 |
s |
| Over Temperature Protection |
TSD |
Over Temperature Protection |
150 |
165 |
200 |
°C |
| Over Temperature Protection hys. |
TSD |
Over Temperature Protection return |
- |
20 |
- |
°C |
| Under Voltage Protection |
VBSUVD |
Upper Arm Under Voltage Protection |
10.0 |
11.0 |
12.0 |
V |
| Under Voltage Protection recovery |
VBSUVR |
Upper Arm Under Voltage Protection recovery |
10.5 |
11.5 |
12.5 | |
| Under Voltage Protection |
VCCUVD |
Lower Arm Under Voltage Protection |
10.5 |
11.5 |
12.5 | |
| Under Voltage Protection recovery |
VccUVR |
Lower Arm Under Voltage Protection recovery |
11.0 |
12.0 |
13.0 | |
| IGBT turn-on propagation delay time |
tdON |
VBB = 300 V, IC = 10A, Inductance Load |
- |
1.3 |
TBD |
s |
| IGBT rise time |
tr |
VBB = 300 V, IC = 10A, Inductance Load |
- |
0.1 |
TBD | |
| IGBT turn-on time |
tON |
VBB = 300 V, IC = 10A, Inductance Load |
- |
1.4 |
TBD | |
| IGBT turn-off propagation delay time |
tdOFF |
VBB = 300 V, IC = 10A, Inductance Load |
- |
1.2 |
TBD | |
| IGBT fall time |
tf |
VBB = 300 V, IC = 10A, Inductance Load |
- |
0.1 |
TBD | |
| IGBT turn-off time |
tOFF |
VBB = 300 V, IC = 10A, Inductance Load |
- |
1.3 |
TBD | |
| IGBT vertical arm turn-on, a turn-off propagation delay time lag |
| tOFFL- tONH| |
VBB = 300 V, IC = 10A, Inductance Load (include each Phase) |
- |
0 |
300 |
ns |
| IGBT vertical arm turn-on, a turn-off propagation delay time lag |
| tOFFH- tONL| |
VBB = 300 V, IC = 10A, Inductance Load (include each Phase) |
- |
0 |
300 |
ns |
| daed time |
tdaed |
VBB = 300 V, IC = 10A, Inductance Load |
1 |
- |
- |
s |
| FRD reverse recovery time |
trr |
VBB = 300 V, IF = 10 A |
- |
100 |
- |
ns |
MIG10J503 Features
· The 4th generation trench gate thin wafer NPT IGBT is adopted.
· FRD is built in.
· The level shift circuit by high-voltage IC is built in.
· The simplification of a high side driver power supply is possible by the bootstrap system.
· Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in.
· Short Circuit Protection and Over Temperature Protection state are outputted.
· The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
· Low thermal resistance by adoption of original high thermal conduction resin.
· FRD is built in.
· The level shift circuit by high-voltage IC is built in.
· The simplification of a high side driver power supply is possible by the bootstrap system.
· Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in.
· Short Circuit Protection and Over Temperature Protection state are outputted.
· The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
· Low thermal resistance by adoption of original high thermal conduction resin.
MIG10J503 Connection Diagram
MIG10J503
PDF/DataSheet Download
- Datasheet: MIG10J503
- File Size: 114723 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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