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Features: · The 4th generation trench gate thin wafer NPT IGBT is adopted.· FRD is built in.· The level shift circuit by high-voltage IC is built in.· The simplification of a high side driver power supply is possible by the bootstrap system.· Short Circuit Protection, Over Temperature Protection ,...

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SeekIC No. : 004421252 Detail

MIG10J503: Features: · The 4th generation trench gate thin wafer NPT IGBT is adopted.· FRD is built in.· The level shift circuit by high-voltage IC is built in.· The simplification of a high side driver power ...

MIG10J503 Data Sheet

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Part Number:: MIG10J503
Supply Ability:: 5000

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Upload time: 2024/4/27

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Product Details

Description

Features:

· The 4th generation trench gate thin wafer NPT IGBT is adopted.
· FRD is built in.
· The level shift circuit by high-voltage IC is built in.
· The simplification of a high side driver power supply is possible by the bootstrap system.
· Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in.
· Short Circuit Protection and Over Temperature Protection state are outputted.
· The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
· Low thermal resistance by adoption of original high thermal conduction resin.

Pinout

Connection Diagram

Specifications

Item	Symbol	Condition	Min.	Typ.	Max.	Unit
Operating Power Supply Voltage	V_BB	-	50	300	400	V
	V_CC	-	13.5	15	17
	V_BS	-	13.5	15	17
Current dissipation	I_BB	V_BB = 400 V ､VIN = 5 V(1arm)	-	-	1	mA
	I_CC	V_CC = 15 V､VIN = 5 V(1arm)	-	0.8	1.5	mA
	I_CC	V_CC = 15 V､VIN = 0 V(1arm)	-	1.1	1.5	mA
	I_BS	V_CC = 15 V､VIN = 5 V(1arm)	-	330	600	A
	I_BS	V_CC = 15 V､VIN = 0 V(1arm)	-	470	1000	A
input Voltage	V_IH	V_IN = "H"	3.5	2.8	-	V
input Voltage	V_IL	V_IN = "L"	-	2.3	1.5	V
input Voltage hysteresis	V_INhys	V_IN= "H""L"	-	0.5	-	V
input Voltage hysteresis	V_INhys	V_IN = "L""H"	-	0.5	-	V
Input Current	I_IH	V_CC = 15 V､VIN = 5V	50	100	200	A
Input Current	I_IL	V_CC = 15 V､VIN = 0 V	75	150	300	A
IGBT Saturation Voltage	V_satU	V_CC = VBS=15V, IC = 10 A, Upper Arm	-	1.5	2.0	V
IGBT Saturation Voltage	V_satL	V_CC = 15V, IC = 10 A, Lower Arm	-	1.5	2.0	V
FRD Forward Voltage	V_FU	I_F = 10 A, Upper Arm	-	1.3	1.9	V
FRD Forward Voltage	V_FL	I_F = 10 A, Lower Arm	-	1.3	1.9	V
Fault Output Voltage	V_FO	I_FO = 5 mA,	-	0.8	1.2	V
Short Current Protection Voltage	V_R	Short Current Protection	0.45	0.5	0.55	V
Short Current Protection delay time	V_Rtd	Short Current Protection	0.5	1	2	s
Over Temperature Protection	TSD	Over Temperature Protection	150	165	200	°C
Over Temperature Protection hys.	TSD	Over Temperature Protection return	-	20	-	°C
Under Voltage Protection	V_BSUVD	Upper Arm Under Voltage Protection	10.0	11.0	12.0	V
Under Voltage Protection recovery	V_BSUVR	Upper Arm Under Voltage Protection recovery	10.5	11.5	12.5
Under Voltage Protection	V_CCUVD	Lower Arm Under Voltage Protection	10.5	11.5	12.5
Under Voltage Protection recovery	V_ccUVR	Lower Arm Under Voltage Protection recovery	11.0	12.0	13.0
IGBT turn-on propagation delay time	t_dON	V_BB = 300 V, IC = 10A, Inductance Load	-	1.3	TBD	s
IGBT rise time	t_r	V_BB = 300 V, IC = 10A, Inductance Load	-	0.1	TBD
IGBT turn-on time	t_ON	V_BB = 300 V, IC = 10A, Inductance Load	-	1.4	TBD
IGBT turn-off propagation delay time	t_dOFF	V_BB = 300 V, IC = 10A, Inductance Load	-	1.2	TBD
IGBT fall time	t_f	V_BB = 300 V, IC = 10A, Inductance Load	-	0.1	TBD
IGBT turn-off time	t_OFF	V_BB = 300 V, IC = 10A, Inductance Load	-	1.3	TBD
IGBT vertical arm turn-on, a turn-off propagation delay time lag	\| t_OFFL- t_ONH\|	V_BB = 300 V, IC = 10A, Inductance Load (include each Phase)	-	0	300	ns
IGBT vertical arm turn-on, a turn-off propagation delay time lag	\| t_OFFH- t_ONL\|	V_BB = 300 V, IC = 10A, Inductance Load (include each Phase)	-	0	300	ns
daed time	t_daed	V_BB = 300 V, IC = 10A, Inductance Load	1	-	-	s
FRD reverse recovery time	t_rr	V_BB = 300 V, IF = 10 A	-	100	-	ns

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