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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: MIG15J503H

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage tr...


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MIG15J503H General Description


MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI(silicon-on-insulator)process drives these directly in response to a PWM signal.Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without theinterface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat resistance is realized.

MIG15J503H Maximum Ratings

Item
Symbol
Rating
Unit
Power Supply Voltage
VBB
450
V
VBB(surge)
500
V
VCC
20
V
VBS
20
V
Collector-Emitter Voltage
VCES
600
V
Each Collector Current (DC)
IC
±15
A
Each Collector Current (PEAK)
ICP
±30
A
Input Voltage
VIN
5.5
V
Fault Output Supply Voltage
VFO
20
V
Fault Output Current
IFO
15
mA
PGND-SGND Voltage Difference
VPGND-SGND
±5
V
Output Voltage Rate of Change
Dv/dt
20
kV/s
Collector Power Dissipation
(Per 1 IGBT Chip)
PC
43
W
Collector Power Dissipation
(Per 1 FRD Chip)
PC
25
W
Operating Temperature
TOPE
20~100
°C
Junction Temperature (NOTE 1)
Tj
150
°C
Storage Temperature
Tstg
40~125
°C
Isolation Voltage(60Hz sinusoidal ,AC)
VISO
2500 (1min)
Vrms

MIG15J503H Features

·  The 4th generation trench gate thin wafer NPT IGBT is adopted.
·  FRD is built in.
·  The level shift circuit by high-voltage IC is built in.
·  The simplification of a high side driver power supply is possible by the bootstrap system.
·  Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protectionfunction are built in.
·  Short Circuit Protection and Over Temperature Protection state are outputted.
·  The lower arm emitter terminal has been independent by each phase for the purpose of the current detection atthe time of vector control.
·  Low thermal resistance by adoption of original high thermal conduction resin.

MIG15J503H Connection Diagram

MIG15J503H Connection Diagram

MIG15J503H datasheet

MIG15J503H
PDF/DataSheet Download

  • Datasheet: MIG15J503H
  • File Size: 106423 KB
  • Manufacturer: TOSHIBA [Toshiba Semiconductor]
  • Click here to Download

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