MIG30J103HB

The MIG30J103HB is a kind of intelligent power module. MIG30J103HB is silicon N channel IGBT. MIG30J103HB is designed for high power switching applications and motor control applications. There are some features as follows: (1)the device includes IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection; (2)the electrodes are isolated from case; (3)high speed type IGBT: VCE(sat)=2.7 V max, toff=2.0s max and trr=0.25s; (4)outline: TOSHIBA 2-99EIA; (5)weight: 80g.

The following is about the maximum ratings of MIG30J103HB(Tj=25): first is about the inverter part: (1)supply voltage, VCC: 450 V when P-N power terminal; (2)collector emitter voltage, VCES: 600 V; (3)collector current (DC), ±IC: 30 A at Tc=25; (4)collector power dissipation, PC: 150 W at Tc=25; (5)junction temperature, Tj: 150; then is about the control part: (1)supply voltage, VD: 20 V; (2)input voltage, VIN: 20 V at VIN=VD; (3)fault output voltage, VFO: 20 V at VFO=VD; (4)fault output current, IFO: 7 mA; the last one is about all system: (1)operating temperature, TC: -20 to +100; (2)storage temperature range, Tstg: -40 to +125; (3)isolation voltage, VISO: 2500 V when AC 1 minute.

The last one is about some electrical characteristics of MIG30J103HB (Tj=25): first is about the inverter part: (1)collector cut-off current, ICES: 1.0 mA mA max at VCE=600 V, Tj=25; 20 mA at VCE=600 V, Tj=125; (2)collector emitter saturation voltage, VCE(sat): 2.1 V typ and 2.7 V max at VD=15 V, IIN=0 mA, IC=30 A; 3.0 V max at VD=15 V, IIN=0 mA, IC=30 A, Tj=125; (3)forward voltage, VF: 2.0 V typ and 2.7 V max at IF=30 A; then is about the control part (Tj=25): (1)circuit current, ID: 6 mA min, 12 mA typ and 18 mA max when VD=15 V when high slide; 11 mA min, 23 mA typ and 35 mA max at VD=15 V when low slide; (2)input on signal voltage, VIN(ON): 1.0 V min, 1.3 V typ and 1.6 V max; (3)input off signal voltage, VIN(OFF): 1.5 V min, 1.8 V typ and 2.1 V max; (4)fault output current, IFO: (protection): 3 mA min, 5 mA typ and 7 mA max; fault output current: (normal): 1 mA max; the last one is about the other parts: (1)junction to case thermal resistance, Rth(j-c): 1.25/W max at inverter IGBT stage; (2)junction to case thermal resistance, Rth(j-c): 3.75/W max at inverter inverter, FWD stage; (3)case to fin thermal resistance with compound, Rth(c-f): 0.2/W typ.