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MFG:TOSHIBA  D/C:7IPM: 75A1200V  

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Part Number: MIG75Q202H

 

MFG: TOSHIBA

 

D/C: 7IPM: 75A1200V

 

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MIG75Q202H Maximum Ratings

Stage
Characteristic
Condition
Symbol
Ratings
Unit
Inverter
 Supply voltage P-N power terminal
VCC
900
V
Collector-emitter voltage
-
VCES
1200
V
Collector current Tc = 25°C, DC
IC
75
A
Forward current Tc = 25°C, DC
IF
75
A
Collector power dissipation Tc = 25°C
PC
400
W
Junction temperature
-
Tj
150
°C
Brake
 Supply voltage P-N power terminal
VCC
900
V
Collector-emitter voltage
-
VCES
1200
V
Collector current Tc = 25°C, DC
IC
25
A
Reverse voltage
-
VR
1200
V
Forward current Tc = 25°C, DC
IF
25
A
Collector power dissipation Tc = 25°C
PC
140
W
Junction temperature
-
Tj
150
°C
Control
 Control supply voltage VD-GND terminal
VD
20
V
Input voltage IN-GND terminal
VIN
20
V
Fault output voltage FO-GND (L) terminal
VFO
20
V
Fault output current FO sink current
IFO
10
mA
Module
 Operating temperature
-
TC
−20 ~ +100
°C
Storage temperature range
-
Tstg
−40 ~ +125
°C
Isolation voltage AC 1 minute
VISO
2500
V
Screw torque M5
-
3
Nm

MIG75Q202H Typical Application

`Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package.
`The electrodes are isolated from case.
`High speed type IGBT : VCE (sat) = 3.5 V (Max)
                                         toff = 2.8 s (Max)
                                         trr = 0.21 s (Max)
`Package dimensions : TOSHIBA 2-110A1A
`Weight : 520g

MIG75Q202H datasheet

MIG75Q202H
PDF/DataSheet Download

  • Datasheet: MIG75Q202H
  • File Size: 231024 KB
  • Manufacturer: TOSHIBA [Toshiba Semiconductor]
  • Click here to Download

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