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Part Number: MIT-4A11B

 

 

 

 

Description: The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor...


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MIT-4A11B General Description


The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.

MIT-4A11B Maximum Ratings

Parameter
Symbol
Maximum Rating
Unit
NPUT
 Continuous Forward Current
LF
50
mA
Reverse Voltage
VR
5
V
Power Dissipation
Pad
75
mW
OUTPUT
 Collector-emitter breakdown voltage
V(BR)CEO
30
V
Emitter-Collector breakdown voltage
V(BR)ECO
5
V
Collector power dissipation
PC
75
mW
Total power dissipation
PTOT
mW
Operating Temperature Range
Topr
Storage Temperature Range
TSTG
Soldering temperature
TSOl

MIT-4A11B Features

·Ultra-compact
·PWB mounting type package
·High sensing accuracy ( Slit width: 0.3mm )
·Gap between light emitter and detector: 1.2mm

MIT-4A11B Typical Application

·Cameras
·Floppy disk drives
·Printer

MIT-4A11B datasheet

MIT-4A11B
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