MFG:IXYS Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: IXYS
Descriptions: IGBT MODULE CBI MINIPACK2
20
37.05000
741.00
| Technical/Catalog Information | MITA30WB600TMH |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Configuration | * |
| Input | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1600V |
| Current - Collector (Ic) (Max) | 40A |
| Power - Max | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Current - Collector Cutoff (Max) | - |
| NTC Thermistor | No |
| Input Capacitance (Cies) @ Vce | - |
| Mounting Type | Chassis Mount |
| Package / Case | MiniPack2 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MITA30WB600TMH MITA30WB600TMH |
MIT-4A11
PDF/DataSheet Download
MODULE IGBT CBI
MODULE IGBT CBI
The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter.
The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter.
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