MJ100BX100

The MJ100BX100 is a kind of NPN silicon power transistor module. It is designed for industrial service under practical operating environments found in switching high power inductive loads.

There are some features of MJ100BX100 as follows: (1)energy efficient package; (2)isolated mounting plate (2500 V RMS); (3)low saturation voltage; (4)low thermal resistance; (5)internal flyback and speed-up diodes; (6)high DC current gain; (7)low current terminals seperated from high current terminals.

The following is about the maximum ratings of MJ100BX100 (per device and TC=25 unless otherwise noted): (1)collector-emitter sustaining voltage (IB=0), VCEO: 880 V; (2)collector-emitter voltage (VBE=-2 V), VCEX(sus): 1000 V; (3)collector-base voltage, VCBO: 1000 V; (4)emitter-base voltage, VEB: 7 V; (5)isolation voltage (ac for 1 minute), VISOL: 2500 V; (6)collector current: 100 A for continuous and 200 A for peak nonrepetitive for 1 ms; (7)continuous base current, IB: 10 A; (8)total device dissipation, PD: 700 W; (9)operating junction range, TJ: -40 to +150; (10)storage temperature range, Tstg: -40 to +125.