MJ12005

The MJ12005 is designed as a silicon NPN power transistor mounted in a hermetically sealed metal case designed for horizontal deflection circuits.

Some absolute maximum ratings have been concluded into several points as follow. The first one is about its collector to emitter voltage which would be 1500V. The second one is about its emitter to base voltage which would be 5.0V. The third one is about its collector current which would be 8.0A. The fourth one is about its emitter current which would be 12A. The fifth one is about its base current which would be 4.0A. The sixth one is about its power dissipation which would be 100W. The seventh one is about its operating and storage junction temperature range which would be from -65°C to +150°C. The eighth one is about its thermal resistance which would be 1.25°C/W.

Also some electrical characteristics about it. The first one is about its Ices which would be max 0.25mA with condition of Vce=1500V. The second one is about its Iebo which would be max 0.1mA with condition of Vbe=5.0V. The third one is about its BVceo which would be min 750V with condition of Ic=50mA. The fourth one is about its Vce(sat) which would be max 5.0V with condition of Ic=5.0A and Ib=1.0A. The fifth one is about its Vbe(sat) which would be max 1.5V with condition of Ic=5.0A and Ib=1.0A. The sixth one is about its tF which which would be max 1.0us with condition of Ic=5.0A and Ib1=1.0A and Lb=8.0uH. The seventh one is about its Is/b which would be min 2.0A with condition of Vce=50V and t=1.0s. And so on.

At present we have not got so much information about it and we would try hard to get more information. If you have any question or suggestion or want to know more information please contact us for details and we would be glad to serve you.