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MJ15011

Transistors Bipolar (BJT) 10A 250V 200W NPN

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SeekIC No. : 00213747 Detail

MJ15011: Transistors Bipolar (BJT) 10A 250V 200W NPN

MJ15011 Data Sheet

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Part Number:
MJ15011
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single
Maximum Operating Temperature : + 200 C Mounting Style : Through Hole
Package / Case : TO-204 Packaging : Tray    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 20
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 10 A


Parameters:

Technical/Catalog InformationMJ15011
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)10A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJ15011
MJ15011
MJ15011OS ND
MJ15011OSND
MJ15011OS



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