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- Table of contents:
MJ21196
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Suppliers
DataSheet
General Description
MJ21196 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| CollectorEmitter Voltage |
VCEO |
250 |
Vdc |
| CollectorBase Voltage |
VCBO |
400 |
Vdc |
| EmitterBase Voltage |
VEBO |
5 |
Vdc |
| CollectorEmitter Voltage - 1.5 V |
VCEX |
400 |
Vdc |
| Collector Current - Continuous - Peak (1) |
IC |
16 30 |
Adc |
| Base Current - Continuous |
IB |
5 |
Adc |
| Total Power Dissipation @ TC = 25 Derate Above 25 |
PD |
250 1.43 |
Watts W/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +200 |
MJ21196 Typical Application
• Total Harmonic Distortion Characterized
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second
MJ21196
PDF/DataSheet Download
- Datasheet: MJ21196
- File Size: 153426 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
- ·MJ21193
- MOTOROLA [Motorola, Inc]
- 16 ampere complementary silicon power transistors 250 volts 250 watts
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- ONSEMI [ON Semiconductor]
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- NPN Silicon Power Transistor
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- ONSEMI [ON Semiconductor]
- NPN Silicon Power Transistor
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- ·MJ21294G
- ONSEMI [ON Semiconductor]
- NPN Silicon Power Transistor
- 58499 KB
- ·MJ2194
- MOTOROLA [Motorola, Inc]
- 16 ampere complementary silicon power transistors 250 volts 250 watts
- 177636 KB
- ·MJ2253
- SEME-LAB [Seme LAB]
- Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.
- 11342 KB
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