Transistors Bipolar (BJT) 6A 100V 65W PNP
MJB42CT4G: Transistors Bipolar (BJT) 6A 100V 65W PNP
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 6 A |
| DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
| Maximum Operating Frequency : | 3 MHz (Min) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | D2PAK |
| Packaging : | Reel |
| Technical/Catalog Information | MJB42CT4G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 6A |
| Power - Max | 65W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
| Frequency - Transition | 3MHz |
| Current - Collector Cutoff (Max) | 700A |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJB42CT4G MJB42CT4G MJB42CT4GOS ND MJB42CT4GOSND MJB42CT4GOS |