MJB44H11

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 10 A
Package / Case : D2PAK


Application

• Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−O @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	80	Vdc
CollectorBase Voltage	VCB	5	Vdc
Collector Current − Continuous − Peak	IC	10 20	Adc
Total Power Dissipation @ TC = 25 Derate above 25	PD	50 1.67	Watts W/
Total Power Dissipation @ TC = 25 Derate above 25	PD	2.0 0.016	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to 150

Parameters:

Technical/Catalog Information	MJB44H11
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	10A
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJB44H11 MJB44H11 MJB44H11OS ND MJB44H11OSND MJB44H11OS