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MJB44H11
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Suppliers
DataSheet
General Description
MJB44H11 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| CollectorEmitter Voltage |
VCEO |
80 |
Vdc |
| CollectorBase Voltage |
VCB |
5 |
Vdc |
| Collector Current − Continuous − Peak |
IC |
10 20 |
Adc |
| Total Power Dissipation @ TC = 25 Derate above 25 |
PD |
50 1.67 |
Watts W/ |
| Total Power Dissipation @ TC = 25 Derate above 25 |
PD |
2.0 0.016 |
Watts W/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to 150 |
MJB44H11 Typical Application
• Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−O @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−O @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
MJB44H11
PDF/DataSheet Download
- Datasheet: MJB44H11
- File Size: 77806 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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- ·MJB45H11
- ONSEMI [ON Semiconductor]
- Complementary Power Transistors
- 77806 KB
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