MJD200

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 8 V
Maximum Operating Frequency : 65 MHz (Min)
DC Collector/Base Gain hfe Min : 70 at 500 mA at 1 V


Application

• CollectorEmitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Low CollectorEmitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High CurrentGain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB

Specifications

Rating	Symbol	Value	Unit
CollectorBase Voltage	VCEO	40	Vdc
CollectorEmitter Voltage	VCBO	25	Vdc
EmitterBase Voltage	VEB	8	Vdc
Collector Cument - Continuous Peak	IC	5 10	Adc
Base Cument	IB	1	Adc
Total Power Dissipation @ TA = 25 Derate Above 25	PD	12.5 0.1	Watts W/
Total Power Dissipation @ TC = 25 Derate Above 25	PD	1.4 0.011	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200

Parameters:

Technical/Catalog Information	MJD200
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	5A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 500mA
Frequency - Transition	65MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJD200 MJD200