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Part Number: MJD42C(PNP)

 

 

 

 

 

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MJD42C(PNP) Maximum Ratings

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 100 V
VEBO Emitter to base voltage 5 V
IC Collector current 6 A
ICP Collector current (pulse) 10 A
IB Base current 2 A
PD Total Device Dissipation FR-5 Board
@TA = 25
Derate above 25
20
0.16
W
W/
PD Total Device Dissipation Alumina Substrate
@TA = 25
Derate above 25
1.75
0.014
W
W/
Tj Junction temperature 150
Tstg Storage temperaturerange -65 to +150
RèJC Thermal Resistance, Junction-to-Case 6.25 /W
RèJA Thermal Resistance, Junction-to-Ambient 71.4 /W

MJD42C(PNP) Features

·Lead Formed for Surface Mount Applications in Plastic Sleeves
·Monolithic Construction With Built?in Base ? Emitter Resistors
·Pb-Free Packages are Available

MJD42C(PNP) datasheet

MJD112
PDF/DataSheet Download

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