Transistors Bipolar (BJT) 8A 80V 20W NPN
MJD44H11-001: Transistors Bipolar (BJT) 8A 80V 20W NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 8 A |
| DC Collector/Base Gain hfe Min : | 60 at 2 A at 1 V | Configuration : | Single |
| Maximum Operating Frequency : | 85 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | IPAK |
| Packaging : | Tube |
| Technical/Catalog Information | MJD44H11-001 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 8A |
| Power - Max | 20W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Frequency - Transition | 85MHz |
| Current - Collector Cutoff (Max) | 1A |
| Mounting Type | Through Hole |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJD44H11 001 MJD44H11001 MJD44H11 001OS ND MJD44H11001OSND MJD44H11-001OS |