MJD44H11-001

Transistors Bipolar (BJT) 8A 80V 20W NPN

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MJD44H11-001: Transistors Bipolar (BJT) 8A 80V 20W NPN

floor Price/Ceiling Price

Part Number:
MJD44H11-001
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2019/9/20

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 60 at 2 A at 1 V Configuration : Single
Maximum Operating Frequency : 85 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : IPAK
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Package / Case : IPAK
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 60 at 2 A at 1 V
Maximum Operating Frequency : 85 MHz


Parameters:

Technical/Catalog InformationMJD44H11-001
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)8A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Frequency - Transition85MHz
Current - Collector Cutoff (Max)1A
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD44H11 001
MJD44H11001
MJD44H11 001OS ND
MJD44H11001OSND
MJD44H11-001OS



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