Purchase MJD49T4, In-stock MJD49T4 From SeekIC.


Part Number: MJD49T4
Description: The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged hi...


Description: The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged hi...
The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage (IE = 0) |
450 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
350 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
5 |
V |
|
IC |
Collector Current |
1 |
A |
|
ICM |
Collector Peak Current (tp < 5 ms) |
2 |
A |
|
IB |
Base Current |
0.6 |
A |
|
IBM |
Base Peak Current (tp < 5 ms) |
1.2 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
15 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
TJ |
Max. Operating Junction Temperature |
150 |
MJD49T4
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