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Part Number: MJD49T4

 

 

 

 

Description: The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged hi...


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MJD49T4 General Description


The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.

MJD49T4 Maximum Ratings

Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
450
V
VCEO
Collector-Emitter Voltage (IB = 0)
350
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
1
A
ICM
Collector Peak Current (tp < 5 ms)
2
A
IB
Base Current
0.6
A
IBM
Base Peak Current (tp < 5 ms)
1.2
A
Ptot
Total Dissipation at Tc = 25
15
W
Tstg
Storage Temperature
-65 to 150
TJ
Max. Operating Junction Temperature
150

MJD49T4 Features

·STMicroelectronics PREFERRED SALESTYPE
·HIGH VOLTAGE CAPABILITY
·SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
·ELECTRICALLY SIMILAR TO TIP49

MJD49T4 Typical Application

·SWITCH MODE POWER SUPPLIES
·AUDIO AMPLIFIERS
·GENERAL PURPOSE SWITCHING AND AMPLIFIER

MJD49T4 datasheet

MJD49T4
PDF/DataSheet Download

  • Datasheet: MJD49T4
  • File Size: 146656 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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