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MJD5731T4G

Transistors Bipolar (BJT) 1A 350V 15W PNP

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SeekIC No. : 00207825 Detail

MJD5731T4G: Transistors Bipolar (BJT) 1A 350V 15W PNP

MJD5731T4G Data Sheet

floor Price/Ceiling Price

US $ .23~.39 / Piece | Get Latest Price
Part Number:
MJD5731T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.39
  • $.35
  • $.26
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30 at 0.3 A at 10 V Configuration : Single
Maximum Operating Frequency : 10 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Package / Case : DPAK
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 10 MHz (Min)
Collector- Emitter Voltage VCEO Max : 350 V
DC Collector/Base Gain hfe Min : 30 at 0.3 A at 10 V


Parameters:

Technical/Catalog InformationMJD5731T4G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)1A
Power - Max15W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Frequency - Transition10MHz
Current - Collector Cutoff (Max)100A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD5731T4G
MJD5731T4G



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