MJE13003G

Transistors Bipolar (BJT) BIP NPN 2A 400V

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SeekIC No. : 00209981 Detail

MJE13003G: Transistors Bipolar (BJT) BIP NPN 2A 400V

floor Price/Ceiling Price

Part Number:
MJE13003G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 8 at 500 mA at 2 V Configuration : Single
Maximum Operating Frequency : 3 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Box    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Box
Maximum DC Collector Current : 1.5 A
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225
DC Collector/Base Gain hfe Min : 8 at 500 mA at 2 V


Parameters:

Technical/Catalog InformationMJE13003G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)1.5A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 500mA
Frequency - Transition4MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE13003G
MJE13003G
MJE13003GOS ND
MJE13003GOSND
MJE13003GOS



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