MJE13005

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Box
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz


Application

·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

Specifications

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	700	V
VCEO	Collector-emitter voltage	Open base	400	V
VEBO	Emitter-base voltage	Open collector	9	V
IC	Collector current (DC)		4	A
ICM	Base Current-Continuous		8	A
IB	Base current		2	A
IBM	Base current-PeaK		4	A
IE	Emitter current		6	A
IEM	Emitter current-Peak		12	A
PC	Collector power dissipation	TC=25	5	W
			75
Tj	Junction temperature		150
Tstg	Storage temperature		-55~150

Description

The MJE13005 features are as follows:
|·With TO-220C package
·High voltage ,high speed




Parameters:

Technical/Catalog Information	MJE13005
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	4A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 1A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE13005 MJE13005 MJE13005OS ND MJE13005OSND MJE13005OS