MJE13007G

Transistors Bipolar (BJT) 8A 400V 80W NPN

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MJE13007G: Transistors Bipolar (BJT) 8A 400V 80W NPN

floor Price/Ceiling Price

US $ .32~.59 / Piece | Get Latest Price
Part Number:
MJE13007G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.59
  • $.47
  • $.36
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Frequency : 14 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 14 MHz


Parameters:

Technical/Catalog InformationMJE13007G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 2A
Frequency - Transition14MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE13007G
MJE13007G
MJE13007GOS ND
MJE13007GOSND
MJE13007GOS



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