MJE15035G

Transistors Bipolar (BJT) 4A 350V 50W PNP

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MJE15035G: Transistors Bipolar (BJT) 4A 350V 50W PNP

floor Price/Ceiling Price

US $ .47~.86 / Piece | Get Latest Price
Part Number:
MJE15035G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.86
  • $.68
  • $.6
  • $.47
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single Dual Collector
Maximum Operating Frequency : 30 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

DC Collector/Base Gain hfe Min : 100
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Configuration : Single Dual Collector
Maximum Operating Frequency : 30 MHz (Min)
Collector- Emitter Voltage VCEO Max : 350 V


Parameters:

Technical/Catalog InformationMJE15035G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)4A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE15035G
MJE15035G
MJE15035GOS ND
MJE15035GOSND
MJE15035GOS



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