MJE170G, US $ .15-.26 , ON Semiconductor, MJE170G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00205212 Detail

MJE170G: Transistors Bipolar (BJT) 3A 40V 12.5W PNP

MJE170G Data Sheet

US $ .15~.26 / Piece | Get Latest Price

Part Number:: MJE170G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	40 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	3 A
DC Collector/Base Gain hfe Min :	50	Configuration :	Single
Maximum Operating Frequency :	50 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-225
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 50 MHz (Min)
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Package / Case : TO-225

Parameters:

Technical/Catalog Information	MJE170G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	3A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 500mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE170G MJE170G MJE170GOS ND MJE170GOSND MJE170GOS

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MJE170G

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