MJE172

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 50 MHz (Min)
DC Collector/Base Gain hfe Min : 50
Package / Case : SOT-32


Application

·For low power audio amplifier and low current, high speed switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	MJE170	Open emitter	-60	V
		MJE171		-80
		MJE172		-100
VCEO	Collector-emitter voltage	MJE170	Open base	-40	V
		MJE171		-60
		MJE172		-80
VEBO	Emitter-base voltage		Open collector	-7	V
IC	Collector current			-3	A
ICM	Collector current-peak			10	A
IB	Base current			-1	A
PC	Collector power dissipation		TC=25	1.5	W
			Ta=25	12.5
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

THe MJE172 features are as follows:
· With TO-126 package
·Complement to type MJE180/181/182




Parameters:

Technical/Catalog Information	MJE172
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	3A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 500mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE172 MJE172 497 2553 5 ND 49725535ND 497-2553-5