Purchase MJE18002D2, In-stock MJE18002D2 From SeekIC.
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- Table of contents:
MJE18002D2
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Suppliers
DataSheet
General Description
MJE18002D2 Maximum Ratings
| Rating |
Symbol |
Value |
Unit | |
| CollectorEmitter Sustaining Voltage |
VCEO |
450 |
Vdc | |
| CollectorBase Breakdown Voltage |
VCBO |
1000 |
Vdc | |
| CollectorEmitter Breakdown Voltage |
VCES |
1000 |
Vdc | |
| Emitter-Base Voltage |
VEBO |
12 |
Vdc | |
| Collector Current - Continuous - Peak (1) |
IC ICM |
2 5 |
Adc | |
| Base Current - Continuous - Peak (1) |
IB IBM |
1 2 |
Adc | |
| Total Device Dissipation @ TC = 250C Derated above 25°C |
PD |
50 0.4 |
Watts W/ | |
| Operating and Storage Temperature |
Tj,Tstg |
-65 to +150 |
||
MJE18002D2 Features
• Improved Global Efficiency Due to the Low Base Drive Requirements
• DC Current Gain Typically Centered at 45
• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
• Easy to Use Thanks to the Integrated Collector/Emitter Diode
• DC Current Gain Typically Centered at 45
• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
• Easy to Use Thanks to the Integrated Collector/Emitter Diode
MJE18002D2 Typical Application
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
MJE18002D2
PDF/DataSheet Download
- Datasheet: MJE18002D2
- File Size: 156337 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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