MJE18004D2

Transistors Bipolar (BJT) 5A 1000V 75W NPN

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SeekIC No. : 00215123 Detail

MJE18004D2: Transistors Bipolar (BJT) 5A 1000V 75W NPN

floor Price/Ceiling Price

Part Number:
MJE18004D2
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 12 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Frequency : 440 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 15
Emitter- Base Voltage VEBO : 12 V
Collector- Emitter Voltage VCEO Max : 450 V
Maximum Operating Frequency : 440 MHz


Features:

• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
• Integrated CollectorEmitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads It's characteristics make it also suitable for PFC application.




Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO
450
Vdc
CollectorBase Breakdown Voltage
VCBO
1000
Vdc
CollectorEmitter Breakdown Voltage
VCES
1000
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
Collector Current - Continuous
- Peak (1)
IC
II
5
10
Adc
Base Current - Continuous
Base Current - Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25
*Derate above 25°C
PD
75
0.6
/W
Operating and Storage Temperature
Tj,Tstg
-65 to +150



Description

The MJE18004D2 is stateofart High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.




Parameters:

Technical/Catalog InformationMJE18004D2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)5A
Power - Max75W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 80mA, 800mA
Frequency - Transition13MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJE18004D2
MJE18004D2



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