MJE182

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 50 MHz (Min)
DC Collector/Base Gain hfe Min : 50
Package / Case : SOT-32


Specifications

SYMBOL	PARAMETER	MIN.	MAX.	UNIT
VCBO	Collector-Base Voltage : MJE180 : MJE181 : MJE182	-	60 80 100	V V V
VEBO	Emitter to Base voltage	-	7	V
VCEO	Collector-Emitter Voltage : MJE180 : MJE181 : MJE182	-	40 60 80	V V V
IC	Collector Current (DC)	-	3	A
ICP	Collector Current (Pulse)	-	6	A
IB	Base Current		1	A
PC	Collector dissipation(Ta=25)	-	1.5	W
PC	Collector dissipation(Tc=25	-65	12.5	W
TJ		-	150
Tamb	operating ambient temperature	-65	- 65 ~ 150

Parameters:

Technical/Catalog Information	MJE182
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	3A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	900mV @ 150mA, 1.5A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE182 MJE182 497 2590 5 ND 49725905ND 497-2590-5