MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: TRANSISTOR NPN 25V 5A TO-126
1920
.11520
221.18
| Technical/Catalog Information | MJE200STU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 5A |
| Power - Max | 15W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Frequency - Transition | 65MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-126 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJE200STU MJE200STU |
MJE1123
PDF/DataSheet Download
The MJE18604D2 is stateofart High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to gua...
TRANSISTOR NPN 80V 3A TO-126
The MJE/MJF18206 have an application specific stateoftheart die dedicated to the electronic ballast ("light ballast") and power supply applications.
The MJE/MJF18204 have an application specific stateoftheart die dedicated to the electronic ballast ("light ballast") and power supply applications.
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