MJE5851

Transistors Bipolar (BJT) 8A 350V 80W PNP

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SeekIC No. : 00214433 Detail

MJE5851: Transistors Bipolar (BJT) 8A 350V 80W PNP

floor Price/Ceiling Price

Part Number:
MJE5851
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Collector- Emitter Voltage VCEO Max : 350 V


Parameters:

Technical/Catalog InformationMJE5851
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 1A, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJE5851
MJE5851
MJE5851OS ND
MJE5851OSND
MJE5851OS



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