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MJE5851G

Transistors Bipolar (BJT) 8A 350V 80W PNP

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SeekIC No. : 00204060 Detail

MJE5851G: Transistors Bipolar (BJT) 8A 350V 80W PNP

MJE5851G Data Sheet

floor Price/Ceiling Price

US $ .92~1.54 / Piece | Get Latest Price
Part Number:
MJE5851G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $1.54
  • $1.42
  • $1.07
  • $.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Collector- Emitter Voltage VCEO Max : 350 V


Parameters:

Technical/Catalog InformationMJE5851G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 1A, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE5851G
MJE5851G
MJE5851GOS ND
MJE5851GOSND
MJE5851GOS



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