MJE5851G, US $ .92-1.54 , ON Semiconductor, MJE5851G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00204060 Detail

MJE5851G: Transistors Bipolar (BJT) 8A 350V 80W PNP

MJE5851G Data Sheet

US $ .92~1.54 / Piece | Get Latest Price

Part Number:: MJE5851G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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$1.42
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$.92

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	350 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	8 A
DC Collector/Base Gain hfe Min :	15	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Collector- Emitter Voltage VCEO Max : 350 V

Parameters:

Technical/Catalog Information	MJE5851G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	8A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 1A, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE5851G MJE5851G MJE5851GOS ND MJE5851GOSND MJE5851GOS

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MJE5851G

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