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MJE5852

Transistors Bipolar (BJT) PNP High Voltage

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SeekIC No. : 00212170 Detail

MJE5852: Transistors Bipolar (BJT) PNP High Voltage

MJE5852 Data Sheet

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Part Number:
MJE5852
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : - 7 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Emitter- Base Voltage VEBO : - 7 V


Parameters:

Technical/Catalog InformationMJE5852
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 1A, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE5852
MJE5852
MJE5852ST ND
MJE5852STND
MJE5852ST



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