MJE700

Power Dissipation :
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 150 C
Package / Case : TO-225
Maximum Collector Cut-off Current : 100 uA
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V


Features:

• High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
• Monolithic Construction with Builtin BaseEmitter Resistors to Limit Leakage Multiplication
• Choice of Packages -
    MJE700 and MJE800 series
    T0220AB, MJE700T and MJE800T


Specifications

Rating	Symbol	MJE700,T MJE800,T	MJE702 MJE703 MJE802 MJE803	Unit
CollectorEmitter Voltage	VCEO	60	80	Vdc
CollectorBase Voltage	VCB	60	80	Vdc
EmitterBase Voltage	VEB	5.0		Vdc
Collector Current	IC	4.0		Adc
Base Current	IB	0.1		Adc
Total Power Dissipation @ TC = 25 Derate above 25	PD	CASE 77	TO220	Watts W/
		40 0.32	50 0.40
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150

Parameters:

Technical/Catalog Information	MJE700
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE700 MJE700 MJE700OS ND MJE700OSND MJE700OS