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MJF18008

Transistors Bipolar (BJT) 8A 450V 45W NPN

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SeekIC No. : 00213663 Detail

MJF18008: Transistors Bipolar (BJT) 8A 450V 45W NPN

MJF18008 Data Sheet

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Part Number:
MJF18008
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 14 Configuration : Single
Maximum Operating Frequency : 13 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220 Full-Pak
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 9 V
Package / Case : TO-220 Full-Pak
Collector- Emitter Voltage VCEO Max : 450 V
DC Collector/Base Gain hfe Min : 14
Maximum Operating Frequency : 13 MHz


Features:

• 1500 Volt CollectorEmitter Breakdown Capability
• Typical Dynamic Desaturation Specified (New TurnOff Characteristic)
• Application Specific StateoftheArt Die Design
• Fast Switching: 200 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage: 0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive
• Low CollectorEmitter Leakage Current - 250 mA Max at 1500 Volts - VCES
• High EmitterBase Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min)




Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Breakdown Voltage
VCES
1500
Vdc
CollectorBase Sustaining Voltage
VCEO(SUS)
650
Vdc
EmitterBase Voltage
VEBO

8.0
Vdc
RMS Isolation Voltage (2)
(for 1 sec, TA = 25, Per Fig. 14
Rel. Humidity < 30%) Per Fig. 15
VISOL
-
-
Vdc

Collector Current - Continuous
- Peak (1)
IC
ICM
10
15
Adc
Base Current - Continuous
- Pulsed (1)
IB
IBM
5.0
10
Adc
Maximum Repetitive EmitterBase
Avalanche Energy
W(BER)
0.2
mJ
Total Power Dissipation @ TC = 25
Total Power Dissipation @ TC = 100
Derated above TC = 25
PD


150
39
1.49
Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150





Parameters:

Technical/Catalog InformationMJF18008
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)8A
Power - Max45W
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
Frequency - Transition13MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJF18008
MJF18008
MJF18008OS ND
MJF18008OSND
MJF18008OS



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