MJF45H11

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 40 MHz
Package / Case : TO-220 Full-Pak


Application

• Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs




Specifications

Rating	Symbol	MJF31C MJF32C	Unit
CollectorEmitter Voltage	VCEO	80	Vdc
EmitterBase Voltage	VEB	5	Vdc
Collector Current - Continuous -Peak	IC	10 20	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	36 1.67	Watts W/
Total Power Dissipation @ Ta = 25 Derate Above 25	PD	2.0 0.016	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150

Parameters:

Technical/Catalog Information	MJF45H11
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	36W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Frequency - Transition	40MHz
Current - Collector Cutoff (Max)	1A
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJF45H11 MJF45H11