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MJF6668G

Transistors Darlington 10A 100V Bipolar Power PNP

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SeekIC No. : 00217454 Detail

MJF6668G: Transistors Darlington 10A 100V Bipolar Power PNP

MJF6668G Data Sheet

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Part Number:
MJF6668G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V Emitter- Base Voltage VEBO : 10 V
Collector- Base Voltage VCBO : 30 V Maximum DC Collector Current : 10 A
Maximum Collector Cut-off Current : 10 uA Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Full-Pak Packaging : Tube    

Description

Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 10 V
Collector- Base Voltage VCBO : 30 V
Maximum Collector Cut-off Current : 10 uA
Maximum DC Collector Current : 10 A
Package / Case : TO-220 Full-Pak


Parameters:

Technical/Catalog InformationMJF6668G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)10A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce3000 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 6mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)10A
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJF6668G
MJF6668G
MJF6668GOS ND
MJF6668GOSND
MJF6668GOS



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