MJL4302A

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 80
Collector- Emitter Voltage VCEO Max : 350 V
Maximum Operating Frequency : 35 MHz (Min)
Package / Case : TO-3BPL


Features:

• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary: Gain Linearity from 100 mA to 5 A High Gain − 80 to 240 hFE = 50 (min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area − 1.0 A/100 V @ 1 Second
• High fT


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	350	Vdc
CollectorBase Voltage	VCBR	350	Vdc
EmitterBase Voltage	VEBO	5.0	Vdc
CollectorEmitter Voltage - 1.5 V	VCEX	350	Vdc
Collector Current - Continuous - Peak (Note 1)	IC	15 30	Adc
Base Current - Continuous	IB	1.5	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	230 1.84	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Parameters:

Technical/Catalog Information	MJL4302A
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	15A
Power - Max	230W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 800mA, 8A
Frequency - Transition	35MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-3BPL
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJL4302A MJL4302A MJL4302AOS ND MJL4302AOSND MJL4302AOS