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Part Number: MM118-XX

 

 

 

 

 

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MM118-XX Maximum Ratings

PART NUMBER SYMBOL MM118-06 MM118-12
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ Tj 25
BVCES 600 V 1200 V
Collector-to-Gate Breakdown Voltage @ Tj 25, RGS= 1
M
BVCGR 600 V 1200 V

Gate-to-Emitter Voltage                                    continuous
                                         
                                                                             transient

VGES
VGEM
+/- 20 V
+/- 30 V
+/- 20 V
+/- 30 V
Continuous Collector Current                                  Tj=
25
                                                                                Tj= 90
IC25
IC90
60 A
32 A
52 A
33 A
Peak Collector Current, pulsewidth limited by Tj max ICM 120 A 104 A
Power Dissipation PD 165 W 165 W
Thermal resistance, junction to base per switch RQjc, max 0.75/W 0.75/W

DESCRIPTION SYMBOL MM118-06 MM118-12
Short Circuit Reverse Current (RBSOA) @ Tj= 125, VCE= 0.8 x VCES Imax 64 A 66 A
Junction and Storage Temperature Range () Tj, Tstg -55 to +150 -55 to +150
Continuous Source Current (parallel Diode) IS 60 A 50 A
Pulse Source Current (parallel Diode) ISM 100 A 100 A

MM118-XX Features

` Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
` Compact and rugged construction offering weight and space savings
` Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add "T" suffix to part number, see option below)
` HPM (Hermetic Power Module)
` Isolation voltage capability (in reference to the base) in excess of 3kV
` Very low thermal resistance
` Thermally matched construction provides excellent temperature and power cycling capability
` Additional voltage ratings or terminations available upon request

MM118-XX datasheet

MM118-XX
PDF/DataSheet Download

  • Datasheet: MM118-XX
  • File Size: 119302 KB
  • Manufacturer: MICROSEMI [Microsemi Corporation]
  • Click here to Download

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