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Part Number: MM74HCT273
Description: The MM74HCT273 utilizes advanced silicon-gate CMOS technology. It has an input threshold and output dr...


Description: The MM74HCT273 utilizes advanced silicon-gate CMOS technology. It has an input threshold and output dr...
The MM74HCT273 utilizes advanced silicon-gate CMOS technology. It has an input threshold and output drive similar to LS-TTL with the low standby power of CMOS.
These positive edge-triggered flip-flops have a common clock and clear-independent Q outputs. Data on a D input, having the specified set-up and hold time, is transferred to the corresponding Q output on the positive-going transition of the clock pulse. The asynchronous clear forces all outputs LOW when it is LOW.
All inputs to this device are protected from damage due to electrostatic discharge by diodes to VCC and ground. MM74HCT devices are intended to interface TTL and NMOS components to CMOS components. These parts can be used as plug-in replacements to reduce system power consumption in existing designs.
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Supply Voltage (VCC) DC Input Voltage (VIN) DC Output Voltage (VOUT) Clamp Diode Current (IIK, IOK) DC Output Current, per pin (IOUT) DC VCC or GND Current, per pin (ICC) Storage Temperature Range (TSTG) Power Dissipation (PD) (Note 3) S.O. Package only Lead Temp. (TL) (Soldering 10 seconds) |
-0.5 to +7.0V -1.5 to VCC+1.5V -0.5 to VCC+0.5V ±20 mA ±25 mA ±50 mA -65 to +150 600 mW 500 mW 260 |
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating - plastic "N" package: -12 mW/°C from 65°C to 85.
MM74HCT273
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