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MM908E622

Features: · High-Performance M68HC908EY16 Core· 16 K Bytes of On-Chip Flash Memory, 512 Bytes of RAM· Internal Clock Generator Module (ICG)· Two 16-Bit, 2-Channel Timers· 10-Bit Analog-to-Digital Converter (ADC)· LIN Physical Layer Interface· Autonomous MCU Watchdog / MCU Supervision· One Analog I...

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SeekIC No. : 004423171 Detail

MM908E622: Features: · High-Performance M68HC908EY16 Core· 16 K Bytes of On-Chip Flash Memory, 512 Bytes of RAM· Internal Clock Generator Module (ICG)· Two 16-Bit, 2-Channel Timers· 10-Bit Analog-to-Digital Co...

MM908E622 Data Sheet

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Part Number:
MM908E622
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High-Performance M68HC908EY16 Core
· 16 K Bytes of On-Chip Flash Memory, 512 Bytes of RAM
· Internal Clock Generator Module (ICG)
· Two 16-Bit, 2-Channel Timers
· 10-Bit Analog-to-Digital Converter (ADC)
· LIN Physical Layer Interface
· Autonomous MCU Watchdog / MCU Supervision
· One Analog Input with Switchable Current Source
· Four Low RDS(ON) Half-Bridge Outputs
· Three Low RDS(ON) High-Side Outputs
· EC glass driver circuitry
· Wake-Up Input
· One 2/3-Pin Hall-Effect Sensor Input
· 12 Microcontroller I/Os






Specifications

Supply Voltage
Analog Chip Supply Voltage under Normal Operation (Steady-State)
Analog Chip Supply Voltage under Transient Conditions (1)
MCU Chip Supply Voltage		 VSUP(SS)
VSUP(PK)
VDD		 -0.3 to 28
-0.3 to 40
-0.3 to 5.5		 V
Input Terminal Voltage
Analog Chip
Microcontroller Chip		 VIN(ANALOG)
VIN(MCU)		 -0.3 to 5.5
VSS-0.3 to VDD+0.3		 V
Maximum Microcontroller Current per Terminal
All Terminals except VDD, VSS, PTA0:PTA4
PTA0:PTA4		 IPIN(1)
IPIN(2)		 ±15
±25		 mA
Maximum Microcontroller VSS Output Current IMVSS 100 mA
Maximum Microcontroller VDD Input Current IMVDD 100 mA
LIN Supply Voltage
Normal Operation (Steady-State)
Transient Input Voltage (per ISO7637 Specification) and with
External Components (Figure 4, page 18)		 VBUS(SS)
VBUS(PK)		 -18 to 40
-150 to 100		 V
ESD Voltage
Human Body Model (2) H0 terminal
Human Body Model (2) all other terminals
Machine Model (3)
Charge Device Model (4)		 VESD1-1
VESD1-2
VESD2
VESD3		 ±1000
±2000
±200
±750		 V


Notes
` Transient capability for pulses with a time of t < 0.5 sec.
` ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP=1500 ).
` ESD2 testing is performed in accordance with the Machine Model (CZAP =200 pF, RZAP=0 ).
` ESD3 testing is performed in accordance with Charge Device Model, Robotic (CZAP=4.0 pF).






Description

Integrated Quad Half-Bridge, Triple High-Side and EC Glass Driver MM908E622 with Embedded MCU and LIN for High End Mirror




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