MMBD701LT1G

The MMBD701LT1G is one member of the MMBD701LT1 family which is designed as the 70 volts highvoltage silicon hotcarrier detector and switching diodes that is readily adaptable to many other fast switching RF and digital applications. And this device is supplied in an inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements.

Features of the MMBD701LT1G are:(1)extremely low minority carrier lifetime - 15 ps (typ);(2)very Low Capacitance - 1.0 pF @ VR = 20 V;(3)High Reverse Voltage - to 70 Volts;(4)Low Reverse Leakage - 200 nA (Max).

The absolute maximum ratings of the MMBD701LT1G can be summarized as:(1)Reverse Voltage: 70 Volts;(2)Forward Power Dissipation @ TA = 25°C: 200 mW;(3)Forward Power Dissipation Derate above 25°C: 2.0 mW/°C;(4)Operating Junction Temperature Range:55 °C to +125 °C;(5)Storage Temperature Range:55 °C to +125 °C. If you want to know more information such as the electrical characteristics about the MMBD701LT1G, please download the datasheet in www.seekic.com or www.chinaicmart.com .