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MMBF170

MOSFET N-Ch Enhance

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MMBF170: MOSFET N-Ch Enhance

MMBF170 Data Sheet

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US $ .08~.22 / Piece | Get Latest Price
Part Number:
MMBF170
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
  • $.22
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  • $.08
  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 5 Ohms


Features:

· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage




Specifications

Part Number MMBF170
Config/
Polarity		 N
PD
(W)		 0.3
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.5
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V 5.3
RDS(on) Max () @ VGS; 5V
RDS(on) Max () @ VGS; 10.0V 5
VGS(th)
(V)		 3
Ciss (typ)
(pF)		 22
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V


Characteristic Symbol MMBF170 Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0M VDGR 60 V
Gate-Source Voltage Continuous
Pulsed		 VGSS ±20
±40		 V
Drain Current (Note 1) Continuous
Pulsed		 ID 500
800		 mA
Total Power Dissipation (Note 1)
Derating above TA = 25		 Pd 225
1.80		 mW
mW/
Thermal Resistance, Junction to Ambient RJA 556 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150





Parameters:

Technical/Catalog InformationMMBF170
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max300mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBF170
MMBF170
MMBF170CT ND
MMBF170CTND
MMBF170CT



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