MOSFET 20V 300mA P-Channel
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.3 A | ||
| Resistance Drain-Source RDS (on) : | 2200 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SC-70 | Packaging : | Reel |
|
Rating |
Symbol |
Value |
Unit |
|
DraintoSource Voltage |
VDSS |
20 |
Vdc |
|
GatetoSource Voltage Continuous |
VGS |
± 20 |
Vdc |
|
Drain Current Continuous @ TA = 25 Continuous @ TA = 70 Pulsed Drain Current (tp 10 s) |
ID ID IDM |
300 240 750 |
mAdc |
|
Total Power Dissipation @ TA = 25(1) Derate above 25 |
PD |
150 1.2 |
mW mW/°C |
|
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
|
Thermal Resistance JunctiontoAmbient |
RJA |
833 |
/W |
|
Maximum Lead Temperature for Soldering Purposes, for 10 seconds |
TL |
260 |
1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
| Technical/Catalog Information | MMBF2202PT1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 300mA |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 200mA, 10V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 5V |
| Power - Max | 150mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 2.7nC @ 10V |
| Package / Case | SC-70-3, SOT-323-3 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMBF2202PT1 MMBF2202PT1 MMBF2202PT1OSCT ND MMBF2202PT1OSCTND MMBF2202PT1OSCT |