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MMBF5459

JFET N-Channel Transistor General Purpose

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MMBF5459: JFET N-Channel Transistor General Purpose

MMBF5459 Data Sheet

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Part Number:
MMBF5459
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2026/1/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain Current (Idss at Vgs=0) : 6 mA to 13 mA
Gate-Source Breakdown Voltage : - 25 V Configuration : Single
Mounting Style : Through Hole Package / Case : SOT-23-3
Packaging : Reel    

Description

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Gate-Source Breakdown Voltage : - 25 V
Mounting Style : Through Hole
Package / Case : SOT-23-3
Drain Current (Idss at Vgs=0) : 6 mA to 13 mA


Specifications

Symbol Parameter Value Units
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage -25 V
IGF Forward Gate Current 10 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.




Parameters:

Technical/Catalog InformationMMBF5459
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)4mA @ 15V
Gate to Source Voltage (Vgs Max)*
Input Capacitance (Ciss) @ Vds 7pF @ 15V
Power - Max350mW
PackagingTape & Reel (TR)
Package / CaseSOT-23
Voltage - Cutoff (VGS off) @ Id2V @ 10nA
Voltage - Breakdown (V(BR)GSS)25V
Resistance - RDS(On)-
Current Drain (Id) - Max-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBF5459
MMBF5459



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