MMBT3906

Transistors Bipolar (BJT) PNP General Purpose

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MMBT3906 Picture
SeekIC No. : 00205789 Detail

MMBT3906: Transistors Bipolar (BJT) PNP General Purpose

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US $ .04~.1 / Piece | Get Latest Price
Part Number:
MMBT3906
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 250 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Package / Case : SOT-23
Maximum Operating Frequency : 250 MHz
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.2 A


Features:

· Collector current capability IC = -200 mA
· Collector-emitter voltage VCEO = -40 V.





Application

· General switching and amplification.




Pinout

  Connection Diagram




Specifications



Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
MMBT3906 Full Production RoHS Compliant $0.017 SOT-23 3 TAPE REEL Line 1: &Y (Binary Calendar Year Coding)
Line 2: 2A
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product MMBT3906 is available. Click here for more information .


Part Number MMBT3906
Product Type PNP
VCEO (V) -40
IC(A) -0.2
ICM (A) -
PD (W) 0.3
hFE Min 100
hFE Max 300
@I C (A) -0.01
VCE(SAT) Max (mV) -250
@ IC (A) -0.01
@ IB (mA) -1
fT Min (MHz) 250
RCE (SAT) (m) -


SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage open emitter
-
-40
V
VCEO
collector-emitter voltage open base
-
-40
V
VEBO
emitter-base voltage open collector
-
-6
V
IC
collector current (DC)
-
-200
mA
ICM
peak collector current
-
-200
mA
IBM
peak base current
-
-100
mA
Ptot
total power dissipation Tamb 25; note 1
-
250
mW
TSTG
Storage temperature
65
+150
Tj
junction temperature
-
150
Tamb
operating ambient temperature
-65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.




Description

This MMBT3906 is designed for general purpose amplifier and switchingapplications at collector currents of 10 µA to 100 mA.



PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3906.




Parameters:

Technical/Catalog InformationMMBT3906
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)200mA
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT3906
MMBT3906
497 2503 2 ND
49725032ND
497-2503-2



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