MMBT5551

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Maximum Operating Frequency : 300 MHz
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80
Maximum DC Collector Current : 0.6 A


Features:

Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT5401)
Ideal for Medium Power Amplification and Switching




Specifications

Characteristic	Symbol	Value	Units
Collector-Base Voltage	VCBO	180	V
Collector-Emitter Voltage	VCEO	160	V
Emitter-Base Voltage	VEBO	6.0	V
Collector Current - Continuous (Note 1)	IC	200	mA
Power Dissipation (Note 1)	Pd	300	mW
Thermal Resistance, Junction to Ambient (Note 1)	RJA	417	/W
Operating and Storage and Temperature Range	Tj, TSTG	-55 to +150

Part Number	MMBT5551
Product Type	NPN
VCEO (V)	160
IC (A)	0.6
ICM (A)	-
PD (W)	0.3
hFE Min	80
hFE Max	250
@ IC (A)	0.01
VCE (SAT) Max (mV)	150
@ IC (A)	0.01
@ IB (mA)	1
fT Min (MHz)	100
RCE (SAT) (m)	-

Parameters:

Technical/Catalog Information	MMBT5551
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	600mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 1mA, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT5551 MMBT5551 MMBT5551FSDKR ND MMBT5551FSDKRND MMBT5551FSDKR