MMBT5551LT1

Transistors Bipolar (BJT) 600mA 160V NPN

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SeekIC No. : 00213844 Detail

MMBT5551LT1: Transistors Bipolar (BJT) 600mA 160V NPN

floor Price/Ceiling Price

Part Number:
MMBT5551LT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 160 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.06 A
DC Collector/Base Gain hfe Min : 80 at 1 mA at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80 at 1 mA at 5 V
Maximum DC Collector Current : 0.06 A


Parameters:

Technical/Catalog InformationMMBT5551LT1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)160V
Current - Collector (Ic) (Max)60mA
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingCut Tape (CT)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMBT5551LT1
MMBT5551LT1
MMBT5551LT1OSCT ND
MMBT5551LT1OSCTND
MMBT5551LT1OSCT



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