MMBT5551LT1G, US $ .04-.14 , ON Semiconductor, MMBT5551LT1G DataSheet download, circuit diagram from SeekIC.com

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MMBT5551LT1G: Transistors Bipolar (BJT) 600mA 160V NPN

MMBT5551LT1G Data Sheet

US $ .04~.14 / Piece | Get Latest Price

Part Number:: MMBT5551LT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	160 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.06 A
DC Collector/Base Gain hfe Min :	80	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23	Packaging :	Reel

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80
Maximum DC Collector Current : 0.06 A

Parameters:

Technical/Catalog Information	MMBT5551LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	60mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT5551LT1G MMBT5551LT1G MMBT5551LT1GOSDKR ND MMBT5551LT1GOSDKRND MMBT5551LT1GOSDKR

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MMBT5551LT1G

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