MMBT6429LT1G

Transistors Bipolar (BJT) 200mA 55V NPN

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MMBT6429LT1G: Transistors Bipolar (BJT) 200mA 55V NPN

floor Price/Ceiling Price

US $ .05~.17 / Piece | Get Latest Price
Part Number:
MMBT6429LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.17
  • $.11
  • $.09
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 500 at 0.01 mA at 5 V Configuration : Single
Maximum Operating Frequency : 700 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 45 V
Package / Case : SOT-23
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 500 at 0.01 mA at 5 V
Maximum Operating Frequency : 700 MHz


Parameters:

Technical/Catalog InformationMMBT6429LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)200mA
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 10A, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 500A, 10mA
Frequency - Transition700MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT6429LT1G
MMBT6429LT1G
MMBT6429LT1GOSDKR ND
MMBT6429LT1GOSDKRND
MMBT6429LT1GOSDKR



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